| PART |
Description |
Maker |
| D1103 D3232 D45D1 D43D6 D45D3 D45D5 DG189AP/883B D |
Refresh Counter
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 4A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
Non-Muxed Address DRAM Muxed地址内存
Analog Switch 模拟开
Peripheral Miscellaneous 周边杂项
|
Intersil, Corp.
Rochester Electronics, LLC
|
| TH3L20 TH3J10 TH3C10 TH3L10 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP
TRANSISTOR,BJT,ARRAY,DARLINGTON,100V V(BR)CEO,3A I(C),SIP
High Voltage / High Speed Switching Transistors
From old datasheet system
|
Shindengen Electric Mfg
|
| ECG191 ECG189 ECG172A ECG179 ECG193 ECG184 |
Fan Screen kits; Material: Stainless steel wire mesh; Adaptation Machine: For both AC SAN ACE and AC New SAN ACE (except for models with an alarm
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-202VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 300MA I(C) | TO-92 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 300mA的一（c）|2
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 25A I(C) | TO-3 晶体管|晶体管|进步党| 90V的五（巴西）总裁|5A一（c）|
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 70V的五（巴西）总裁| 1A条一（c）|2VAR
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-126
|
DB Lectro, Inc.
SIEMENS AG
|
| 2SD768K |
Silicon NPN Darlington Transistor
TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 6A I(C) | TO-220AB
|
Hitachi Semiconductor
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| TIP130 |
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,8A
|
ti
|
| 2SB0949AQ |
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-220AB
|
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| SLA4031 SLA4010 |
Independent BJT Power Module
Darlington BJT Array
From old datasheet system
|
Sanken
|
| IR2403 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,45V V(BR)CEO,400MA I(C),DIP
From old datasheet system
|
Sharp Corp
|
